Semiconductor device having variable parameter selection based on temperature and test method

ABSTRACT

A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

The present application is a divisional of U.S. application Ser. No.13/490,890, filed Jun. 7, 2012, which is a continuation of U.S. patentapplication Ser. No. 12/688,662, filed Jan. 15, 2010, (now U.S. Pat. No.8,308,359) which is a division of U.S. patent application Ser. No.12/315,521, filed Dec. 4, 2008 (now U.S. Pat. No. 7,654,736), which is adivision of U.S. patent application Ser. No. 11/708,408, filed Feb. 20,2007 (now U.S. Pat. No. 7,480,588), which claims priority to U.S.Provisional Patent Application No. 60/793,220, filed Apr. 19, 2006, eachof which are incorporated herein by reference in their respectiveentireties.

TECHNICAL FIELD

The present application relates generally to a semiconductor device, andmore particularly to a semiconductor device including temperaturesensing circuits that provide operating parameter selection.

BACKGROUND

Semiconductor devices include components that have characteristics thatvary with respect to temperature. For example, as temperature increasesmobility of charge carriers decrease causing transistors, such asinsulated gate field effect transistors (IGFET) to have lower drivecurrent. Although drive current decreases, leakage current (leakagecurrent when the IGFET is turned off) increases. These temperaturedependent characteristics can make design problematic.

Typically when designing a semiconductor device, the designer willdesign circuit timing and internally regulated power supply voltages forworst case corners. Typically, a fast corner may be high voltage, lowtemperature and a slow corner may be low voltage and high temperature.By designing circuits in a semiconductor device for a worst casetemperature, power may be unnecessarily wasted at another temperaturepoint. For example, a power supply may provide a voltage that isunnecessarily high at a first temperature point due to the necessity ofensuring specifications are met at a second temperature point, eventhough the semiconductor device rarely operates at the secondtemperature point. This can cause power to be wasted at the firsttemperature point, which is where the semiconductor device typicallyoperates.

A specific example is an internal refresh operation in a dynamic randomaccess memory (DRAM). At a low temperature, charge on a DRAM capacitorin a DRAM memory cell may degrade more slowly than at high temperature.However, to ensure specifications are met, the frequency of refreshoperations may be unnecessarily high at low temperatures to ensure thehigh temperature case is met. This can cause unnecessary powerconsumption in typical operating temperatures.

Unnecessary power consumption is even more important in mobile devicesas it reduces battery lifetime.

In light of the above, it would be desirable to provide a semiconductordevice in which parameters may be varied with respect to operatingtemperature. In addition, it would be desirable to provide a method oftesting the temperatures at which parameters are varied.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block schematic diagram of a semiconductor device accordingto an embodiment.

FIG. 2 is a circuit schematic diagram of a temperature independentreference voltage generator and temperature sensing circuit according toan embodiment.

FIG. 3(a) is a circuit schematic diagram of temperature sensing circuitsaccording to an embodiment.

FIG. 3(b) is a graph illustrating voltage-temperature characteristics ofa temperature sensing circuit according to an embodiment.

FIG. 4 is a circuit schematic diagram of a variable resistor accordingto an embodiment.

FIG. 5 is a circuit schematic diagram of a variable resistor accordingto an embodiment.

FIG. 6 is circuit schematic diagram of a voltage multiplier according toan embodiment.

FIG. 7 is a circuit schematic diagram of a variable resistor accordingto an embodiment.

FIG. 8(a) is a block schematic diagram of a temperature independent wordline driving circuit according to an embodiment.

FIG. 8(b) is a graph illustrating a word line low voltage versustemperature according to an embodiment.

FIG. 9 is circuit schematic diagram of a dynamic random access memory(DRAM) cell.

FIGS. 10(a) and 10(b) block schematic diagrams of refresh timingcircuits according to embodiments.

FIG. 10(c) is a graph illustrating refresh frequency versus temperatureof a refresh timing circuit according to an embodiment.

FIG. 10(d) is a timing diagram illustrating the operation of refreshtiming circuits according to an embodiment.

FIG. 11(a) is a circuit schematic diagram of a temperature sensingcircuit according to an embodiment.

FIG. 11(b) is a timing diagram illustrating the operation of thetemperature detector circuit of FIG. 11(a) according to an embodiment.

FIG. 12 is a block schematic diagram of a temperature dependentparameter setting scheme according to an embodiment.

FIG. 13 is a circuit schematic diagram of a select register circuitaccording to an embodiment.

FIG. 14 is a circuit schematic diagram of a variable resistor accordingto an embodiment.

FIG. 15 is a circuit schematic diagram of a variable resistor accordingto an embodiment.

FIG. 16 is a flow diagram of a method of testing temperature sensingcircuits of a semiconductor device according to an embodiment.

FIG. 17 is a timing diagram illustrating a method of writing values totemperature select registers and hysteresis select registers accordingto an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

According to the embodiments set forth below, a semiconductor device caninclude a plurality of temperature sensing circuits. The temperaturesensing circuits can include a temperature sensing selection and ahysteresis level selection. In this way, the temperature at which aspecific sensing circuit provides a sensed output (i.e., the temperaturesensing circuit's threshold level) is based on a temperature that can beselected by a user, as just one example. Furthermore, a user may selecta hysteresis level, such that the sensed temperature output may remainuntil the temperature drops by a certain amount. By doing so, circuitscontrolled by the temperature sensing circuits may not have parameterscontinuously modified when a temperature hovers around a predeterminedlevel in which the temperature sensing circuit's threshold has been set.

Referring now to FIG. 1, a semiconductor device according to anembodiment is set forth in a block schematic diagram and given thegeneral reference character 100. Semiconductor device 100 may be asemiconductor memory device. In the embodiment of FIG. 1, semiconductordevice 100 is a Dynamic Random Access Memory (DRAM).

Semiconductor device 100 may include a temperature independent referencevoltage generator 110 and temperature sensing circuits 120.Semiconductor device 100 may also include input buffers 112, temperatureselect registers 114, hysteresis select registers 116, array voltagegenerator 118, periphery voltage generator 122, a memory array 124, abit line reference generator 126, a multiplexer 130, output buffers 132,a refresh timing circuit 134, a negative voltage generator 136, and aword line driver 138. It is understood that semiconductor device mayinclude many other circuits, however to avoid unduly cluttering the FIG.1, these circuits may be omitted.

Temperature independent voltage generator 110 may provide a voltageV_(BGREF) and a voltage V_(TEMP). Voltage V_(BGREF) may be a referencevoltage that is essentially independent of temperature. VoltageV_(BGREF) may be provided as a reference voltage to temperature sensingcircuits 120, array voltage generator 118, and periphery voltagegenerator 122. Input buffers 112 may receive a data DATA, addressADDRESS [or control CTRL] or some combination thereof as an input to beused as temperature select parameters and hysteresis select parametersfor temperature sensing circuits 120. The temperature select parametersmay be stored in temperature select registers 114 and output astemperature select signals TS. The hysteresis select parameters may bestored in hysteresis select registers 116 and used to generatehysteresis select signals HYS.

Temperature sensing circuits 120 may receive a reference voltageV_(TEMP), and temperature independent reference voltage V_(BGREF),temperature select signals TS, and hysteresis select signals HYS and mayprovide “n” temperature indication signals Temp1 to Tempn. Eachtemperature indication signal (Temp1 to Tempn) may be activated at atemperature trip point (temperature threshold value) selected by valuesin temperature select registers 114. Once activated, each temperatureindication signal (Temp1 to Tempn) may be deactivated when thetemperature of the semiconductor device 100 drops a predetermined numberof degrees (hysteresis temperature value) below the trip point based onvalues in hysteresis select registers 116.

Various circuits may receive temperature indication signals (Temp1 toTempn). These circuits may include array voltage generator 118,periphery voltage generator 122, refresh timing circuit 134, andnegative voltage generator 136. Temperature indication signals (Temp1 toTempn) may also be provided to a multiplexer so that the value of thetemperature indication signals (Temp1 to Tempn) may be output to dataoutputs Data via output buffers 132 to be read by a controller, aprocessor or the like.

Array voltage generator 118 may receive the temperature independentreference voltage V_(BGREF), temperature indication signals (Temp1 toTempn), and an activation signal Activate Varray and may provide anarray voltage Vary. Array voltage Vary may be provided by multiplyingtemperature independent reference voltage V_(BGREF) by a factor. Themultiplication factor may be determined in accordance with the values oftemperature indication signals (Temp1 to Tempn). In this way, an arrayvoltage Vary may be set in accordance with an operating temperature sothat temperature effects within the memory array may be compensated.Array voltage Vary may be provided to the memory array 124 and bit linereference voltage generator 126, as just two examples.

Periphery voltage generator 122 may receive the temperature independentreference voltage V_(BGREF), temperature indication signals (Temp1 toTempn), and an activation signal Activate Vperi and may provide aperiphery voltage Vperi. Periphery voltage Vperi may be provided bymultiplying temperature independent reference voltage V_(BGREF) by afactor. The multiplication factor may be determined in accordance withthe values of temperature indication signals (Temp1 to Tempn). In thisway, a periphery voltage Vperi may be set in accordance with anoperating temperature to compensate for temperature effects within theperipheral circuits 128, which receives the peripheral voltage Vperi.

Refresh timing circuit 134 may receive temperature indication signals(Temp1 to Tempn) and may provide a refresh signal Refresh during arefresh mode of operation at a frequency at least partially determinedby at least one of the temperature indication signals (Temp1 to Tempn).By doing so, a refresh period may decrease as temperature increases tocompensate for the increased rate of decay of data in a DRAM cell astemperature increases. Multiple temperature indication signals (Temp1 toTempn) may be used to decrease the refresh period at a rate thatproportionally matches the rate at which the decay of data in a DRAMcell increases with temperature.

Negative voltage generator 136 may also receive temperature indicationsignals (Temp1 to Tempn) and may provide a virtual ground voltage forthe word line WL via the word line driver 138. In this way, the wordline low voltage may decrease as temperature increases to compensate forleakage of a pass transistor (for example, pass transistor 910 of a DRAMcell of FIG. 9). For example, at lower temperatures the virtual groundlevel may be VS S (i.e. a ground level supplied from a source externalto the semiconductor device 100). However, as the temperature increasesto a level in which the pass transistor leakage degrades the data in thememory cell, the word line low level may become negative, so that thepass transistor may be better turned off and leakage current may bereduced. By doing so, refresh frequency may not need to be increased asmuch and/or the semiconductor device 100 may operate over an increasedtemperature range.

Temperature indication signals (Temp1 to Tempn) may be provided to amultiplexer 130 and during a temperature read mode, a temperature readenable signal Temp Read Enable may be activated and the temperatureindication signals (Temp1 to Tempn) may be passed to the data outputData via output buffers 132. It should be noted that there may be moretemperature indication signals (Temp1 to Tempn) than data outputs Data.For example, data output Data may include 8 output signals and there maybe more temperature indication signals (Temp1 to Tempn). In this case,temperature indication signals may be serially output, as just oneexample. In another case, only selected temperature indication signals(Temp1 to Tempn) may be output. In this way, a controller, processor, orthe like may be able to determine if the temperature of thesemiconductor device 100 is within a certain wider temperature range asneeded to control a cooling device such as a fan or the like.

By providing temperature indication signals (Temp1 to Tempn) externallyto semiconductor device by way of data signals Data, a device test maybe implemented. In a device test, a semiconductor device 100 may beevaluated over a temperature range and values may be entered intotemperature select registers 114 to provide temperature select signalsTS and values may be entered into hysteresis select registers 116 toprovide hysteresis select signals HYS to calibrate the temperaturesensing circuits.

Temperature select registers 114 and hysteresis select registers 116 mayreceive a power up detect signal PUD. In this way, temperature selectsignals TS and hysteresis select signals HYS may be set to a defaultstate upon power up. A default state may be all zeroes or all ones, asbut two examples.

During a temperature select register load operation, a temperatureselect load signal TSL may be activated and the values may be loadedinto temperature select registers 114 from data or address pins by wayof input buffers. Likewise, during a hysteresis select register loadoperation, a hysteresis select load signal HYSL may be activated and thevalues may be loaded into hysteresis select registers 116 from data oraddress pins by way of input buffers. It should be noted that there maybe more temperature select registers 114 and/or hysteresis selectregisters 116 than address or data pins. In this case, the values may beserially loaded into temperature select registers 114 and/or hysteresisselect registers 116, respectively.

Referring now to FIG. 2, temperature independent reference voltagegenerator 110 and temperature sensing circuit 120 according to anembodiment are set forth in a circuit schematic diagram.

Temperature independent reference voltage generator 110 may include abandgap reference input section 210 and a bandgap reference outputsection 220. Bandgap reference input stage 210 may provide a voltageV_(TEMP) to both temperature sensing circuit 120 and bandgap referenceoutput section 220. Bandgap reference output section 220 may provide anessentially temperature independent reference voltage V_(BGREF) totemperature sensing circuit 120. An example of a bandgap referenceoutput section providing a temperature independent reference voltage canbe seen in U.S. Pat. No. 6,150,872 incorporated herein by reference orU.S. Pat. No. 6,549,065 incorporated by reference, as just two examples.

Bandgap reference input section 210 may include bipolar transistors (Q1and Q2), resistor R1, transistors (P1 and P2), and amplifier AMP1.Bipolar transistor Q1 may have an emitter commonly connected to anegative input of amplifier AMP1 and a drain of transistor P1. Bipolartransistor Q2 may have an emitter connected to a first terminal ofresistor R1. Bipolar transistors (Q1 and Q2) may have bases andcollectors commonly connected to a ground terminal. Alternatively, insome cases the bases and collectors may be connected to a negativelycharged substrate voltage, as just one more example. Resistor R1 mayhave a second terminal commonly connected to a positive input ofamplifier AMP1 and a drain of transistor P2. Amplifier AMP1 may providevoltage V_(TEMP) as an output, which is also fed back to the gates oftransistors (P1 and P2). Transistors (P1 and P2) may have sourcesconnected to a power supply voltage Vcc.

Bipolar transistors (Q1 and Q2) may be substrate pnp bipolar transistorsand transistor Q2 may be sized at nQ1. Transistors (P1 and P2) may bep-channel insulated gate field effect transistors (IGFET), such asMOSFETs.

The operation of bandgap reference input section 210 will be describedlater in conjunction with the temperature sensing circuit 120.

Referring now to FIG. 3(a), temperature sensing circuits 120 accordingto an embodiment are set forth in a circuit schematic diagram.

In FIG. 3(a), there are n temperature sensing circuits (300-1 to 300-n).Temperature sensing circuit 300-1 may receive voltage V_(TEMP),hysteresis select signals HYS1-m(1), and temperature select signalsTS1-k(1) and may provide a temperature indication signal TEMPI.Temperature sensing circuit 300-2 may receive voltage V_(TEMP),hysteresis select signals HYS1-m(2), and temperature select signalsTS1-k(2) and may provide a temperature indication signal TEMP2, and soon up to the nth temperature sensing circuit 300-n, which may receivevoltage V_(TEMP), hysteresis select signals HYS1-m(n), and temperatureselect signals TS1-k(n) and may provide a temperature indication signalTEMPn.

Each temperature sensing circuit (300-1 to 300-n) may include similarconstituents and therefore only temperature sensing circuit 300-2 willbe described in detail.

Temperature sensing circuit 300-2 may include variable resistors (310-2and 320-2), a transistor P300-2, and an amplifier AMP300-2. Variableresistor 310-2 may have a first terminal connected to ground and asecond terminal connected to a first terminal of variable resistor320-2. Variable resistor 310-2 may receive temperature select signalsTS1-k(2) which can be used to select the resistance value of variableresistor 310-2. Variable resistor 320-2 may have a second terminalconnected to a positive input terminal of amplifier AMP300-2 and a drainof transistor P300-2 (node N1-2). Variable resistor 320-2 may receivehysteresis select signals HYS1-m(2) which can be used to select theresistance value of variable resistor 320-2. Variable resistor 320-2 mayalso receive temperature indication signal TEMP2. Transistor P300-2 mayhave a gate connected to receive voltage V_(TEMP) and a source connectedto a power supply voltage. Transistor P300-2 may be a p-channel IGFET,as just one example. Amplifier AMP300-2 may receive temperatureindependent reference voltage at a negative input terminal and mayprovide the temperature indication signal TEMP2 as an output.

Temperature sensing circuit 300-2 may operate in conjunction withbandgap reference input section 210 to detect when the semiconductordevice 100 achieves a predetermined temperature essentially set byvariable resistor 310-2. Variable resistor 320-2 then may providehysteresis to reset temperature indication signal TEMP2 only after thetemperature of the semiconductor device 100 drops a predetermined numberof degrees below the predetermined temperature. This operation will nowbe described.

Referring now to FIG. 2, in bandgap reference input section 210, thefeedback (via transistors P1 and P2) of amplifier AMP1 biases the secondterminal of resistor R1 and the emitter of bipolar transistor Q1 to beessentially the same voltage. However, in a bandgap reference inputsection 210, it is known that the voltage across resistor R1 has apositive temperature characteristic in that VR1=(kT/q)xIn (n), where kis Boltzman's constant, q is electronic charge, and n is the junctionarea ratio of diode configured bipolar transistors Q2 to Q1. Thus, astemperature increases, current through resistor R1 must increase toprovide the positive temperature characteristic. This is accomplished byincreasing the current in transistor P2 by lowering the voltageV_(TEMP).

FIG. 3(b) is a graph illustrating voltage-temperature characteristics ofa temperature sensing circuit according to an embodiment. Referring nowto FIG. 3(a), voltage V_(TEMP) is received as an input to temperaturesensing circuits 120. For example, temperature sensing circuit 300-2receives voltage V_(TEMP) at a gate terminal of transistor P300-2. Astemperature increases, voltage V_(TEMP) decreases and current increasesIn this way, the voltage at node N1-2 increases with temperature asillustrated in FIG. 3(b). When the voltage at node N1-2 is lower thanthe temperature independent reference voltage V_(BGREF), amplifierAMP300-2 provides a low output as temperature indication signal TEMP2.Temperature indication signal TEMP2 may then be fed back to variableresistor 320-1. When temperature indication signal TEMP2 is low,variable resistor 320-2 is essentially shunted and therefore the voltageat node N1-2 is essentially determined by the current flowing throughtransistor P300-2 times the resistance value of variable resistor 310-2.As noted earlier, as temperature increases voltage V_(TEMP) decreasesand current through transistor P300-2 increases. When the voltage ofnode N1-2 intersects (at temperature T2 of FIG. 3(b)) with thetemperature independent reference voltage V_(BGREF), temperatureindication signal TEMP2 may go from a low logic level to a high logiclevel to indicate that a predetermined temperature in accordance with aprogrammed value of variable resistor 310-2 has been reached.

When temperature indication signal TEMP2 goes high, the feedbackmechanism to variable resistor 320-2 causes the shunt to be turned offand variable resistor 320-2 is then placed in the current path and thevoltage of node N1-2 becomes the current through transistor P300-2 timesthe cumulative resistance values of both variable resistors (310-2 and320-2). Thus, the voltage of node N1-2 becomes stepped up as indicatedby the solid line of FIG. 3(b).

Then as temperature decreases, the voltage of node N1-2 may follow thedashed line illustrated in FIG. 3(b). In this way, temperatureindication signal TEMP2 does not return to a low level until temperatureT1 is reached. By doing so, temperature sensing circuit 300-2 hashysteresis to prevent any unnecessary toggling around a predeterminedtemperature such as temperature T2.

As noted earlier, temperature select signals TS1-k(2) may select apredetermined value for variable resistor (310-2) (i.e., the temperaturesetting resistor) to select the value of temperature T2. Hysteresisselect signal HYS1-m(2) may select a predetermined value for variableresistor 320-2 (i.e. the hysteresis setting resistor) to select thetemperature value of T2-T1.

Each temperature sensing circuit (300-1 to 300-n) may respectivelyreceive a unique set of temperature setting signals (TS1-k) and a uniqueset of hysteresis setting signals HYS1-m. In this way, each temperaturesensing circuit (300-1 to 300-n) may respond to a unique temperature T2and have a unique value for the hysteresis (i.e., T2-T1).

Referring now to FIG. 4, a circuit schematic diagram of variableresistor for each temperature sensing circuit (320-1 to 320-n) accordingto an embodiment is set forth and given the general reference character320-j. Variable resistor 320-j may include resistors RH1 to RHmconnected in series. Resistor RH1 may have a first terminal connected tonode N1-j (corresponding to a node N1-1 for temperature sensing circuit300-1, a node N1-2 for temperature sensing circuit 300-2 and so on).Resistor RH1 may have a second terminal connected to a first terminal ofresistor RH2. Resistor RH2 may have a second terminal connected toresistor RH3. This series connection may be repeated until the lastresistor RHm may have a second terminal connected to a voltage dividernode N2-j (corresponding to a voltage dividing node N2-1 for temperaturesensing circuit 300-1, a voltage dividing node N2-2 for temperaturesensing circuit 300-2 and so on).

Variable resistor 320-j may include transistors (N320-j to N320-mj) andtransistor P320-j. Each transistor (N320-1 j to N320-mj) has a drainconnected to a first terminal of a resistor (RH1 to RHm), respectively,and a source connected to a second terminal of a resistor (RH1 to RHm),respectively. Each transistor (N320-1 j to N320-mj) receives arespective hysteresis setting signal HYS1 j to HYSmj at a respectivegate terminal. Transistor P320-j has a source terminal connected to nodeN1-j, a drain terminal connected to voltage divider node N2-j andreceives temperature indication signal TEMPj at a gate.

Transistors (N320-1 j to N320-mj) may be n-channel IGFETs and transistorP320-j may be a p-channel IGFET, for example.

Transistors (N320-1 j to N320-mj) can each form a shunt for a respectiveresistor RH1 to RHj when a respective hysteresis setting signal HYS1 jto HYSmj is at a high level (i.e. the respective transistor (N320-1 j toN320-mj) is turned on). When a respective hysteresis setting signal HYS1j to HYSmj is at a low level, the respective transistor N320-1 j toN320-mj is turned off and the respective resistor RH1 to RHm is includedin the resistance value of variable resistor 320-j. In this way, aresistance value for variable resistor 320-j may be selected. Whentemperature indication signal TEMPj is at a logic low level, transistorP320-j is turned on and may provide a shunt for variable resistor 320-j.When temperature indication signal TEMPj is at a logic high level,transistor P320-j is turned off and may not provide a shunt, thus aresistance of variable resistor 320-j may include the cumulative valuesof resistors (RH1 to RHm) not shunted by respective transistors (N320- 1to N320-j).

Referring now to FIG. 5, a circuit schematic diagram of variableresistor for each temperature sensing circuit (320-1 to 320-n) accordingto an embodiment is set forth and given the general reference character310-j. Variable resistor 310-j may include resistors RT1 to RTmconnected in series. Resistor RT1 may have a first terminal connected tovoltage dividing node N2-j (corresponding to a node N2-1 for temperaturesensing circuit 300-1, a node N2-2 for temperature sensing circuit 300-2and so on). Resistor RT1 may have a second terminal connected to a firstterminal of resistor RT2. Resistor RT2 may have a second terminalconnected to resistor RT3. This series connection may be repeated untilthe last resistor RTk may have a second terminal connected to ground.

Variable resistor 310-j may include transistors (N310-1 j to N310-kj).Each transistor (N310-1 j to N310-kj) has a drain connected to a firstterminal of a resistor (RT1 to RTk), respectively, and a sourceconnected to a second terminal of a resistor (RT1 to RTk), respectively.Each transistor (N310-1 j to N310-kj) receives a respective temperaturesetting signal TS1 j to TSkj at a respective gate terminal.

Transistors (N310-1 j to N310-kj) may be n-channel IGFETs, for example.

Transistors (N310-1 j to N310-kj) can each form a shunt for a respectiveresistor RT1 to RTk when a respective temperature setting signal TS1 jto TSkj is at a high level (i.e., the respective transistor (N310-1 j toN310-kj) is turned on). When a respective temperature setting signal TS1j to TSkj is at a low level, the respective transistor N310-1 j toN310-kj is turned off and the respective resistor RT1 to RTk is includedin the resistance value of variable resistor 310-j. In this way, aresistance value for variable resistor 310-j may be selected. Theresistance value for variable resistor 310-j may include the cumulativevalues of resistors (RT1 to RTk) not shunted by respective transistors(N310-1 to N310-j).

Referring now to FIG. 6, a circuit schematic diagram of a voltagemultiplier according to an embodiment is set forth and given the generalreference character 600. Voltage multiplier 600 may be used as arrayvoltage generator 118 or periphery voltage generator 122 insemiconductor device 100 of FIG. 1, as just two examples.

Voltage multiplier 600 may receive temperature independent referencevoltage V_(BGREF), temperature indication signals (TEMPI to TEMPn), andan activation signal ACTIVE and may provide an output voltage Vout.Output voltage Vout may be essentially proportional to temperatureindependent reference voltage V_(BGREF). Temperature independentreference voltage V_(BGREF) may be multiplied by a factor in accordancewith the values of temperature indication signals (TEMPI to TEMPn) toprovide output voltage Vout.

Voltage multiplier 600 includes a differential amplifier 610 and adriver circuit 620.

Differential amplifier 610 may include transistors (N600, N602, N604,N606, P600, and P602). Transistor N600 may have a source connected toground, a drain connected to a common node Nc, and a gate connected to apower supply voltage. Transistor N602 may have a source connected toground, a drain connected to a common node Nc, and a gate connected toreceive an activation signal ACTIVE. Transistor N604 may have a sourceconnected to common node Nc, a drain connected to commonly connecteddrain of transistor P600 and a gate of transistor P604 in driver circuit620. Transistor N604 may receive the temperature independent referencevoltage V_(BGREF) at a gate. Transistor N606 may have a source connectedto common node Nc, and a drain commonly connected to a drain and gate oftransistor P602 and a gate of a transistor P600. Transistor 606 may havea gate connected to a feedback node Nfb of driver circuit 620.Transistors (P600 and P602) may each have a source connected to a powersupply voltage. Transistors (N600, N602, N604, and N606) may ben-channel IGFETs and transistors (P600 and P602) may be p-channelIGFETs.

Driver circuit 620 may include transistor P604, resistor R600, andvariable resistor R602. Transistor P604 may have a drain connected tooutput voltage Vout, a source connected to a power supply voltage, and agate connected to commonly connected drains of transistors (P600 andN604). Variable resistor R602 may have a first terminal connected tooutput voltage Vout and a second terminal connected to a feedback nodeNth. Variable resistor R602 may receive temperature indication signalsTEMP1-n. Resistor R600 may have a first terminal connected to feedbacknode Nth and a second terminal connected to a ground.

The operation of voltage multiplier 600 will now be explained. Asmentioned, voltage multiplier 600 may be used as array voltage generator118 or periphery voltage generator 122 in semiconductor device 100 ofFIG. 1, as just two examples. When used as array voltage generator 118,activation signal ACTIVE may correspond to activation signal ActivateVarray and output voltage Vout may correspond to array voltage Vary.When used as periphery voltage generator 122, activation signal ACTIVEmay correspond to activation signal Activate Vperi and output voltageVout may correspond to periphery voltage Vperi. Activation signal Activemay be high when semiconductor device 100 is in an active mode ofoperation in which current demands on internal power supplies such as aperiphery voltage Vperi or array voltage Vary are relatively high.However, in a standby or low current mode, activation signal Active maybe low. When activation signal Active is high, transistor N602 may beturned on and the response time of differential amplifier 610 may beimproved.

Differential amplifier 610 receives the temperature independentreference voltage V_(BGREF) at one input terminal (i.e., the gate oftransistor N604 which forms the positive input terminal) and receivesthe feedback node Nth at another input terminal (i.e., the gate oftransistor N606 which forms the negative input terminal). In this way,the voltage at feedback node Nth of driver circuit 620 may be forced tobe essentially equal to the temperature independent reference voltageV_(BGREF). By forcing the feedback node Nth to be essentially equal tothe temperature independent reference voltage, the voltage at outputvoltage Vout can be determined by the resistance values of variableresistor R602 and resistor R600, which form a voltage divider circuit.More specifically the voltage of output voltage can be the voltage oftemperature independent reference voltage V_(BGREF) times the sum of theresistance values of variable resistor R602 and resistor R600 divided bythe resistance value of resistor R600. Thus, if resistor R600 has aresistance value of R1, and variable resistor R602 has a resistancevalue of R2, then Vout=V_(BGREF)(R1+R2)/R1.

By choosing the resistance value in accordance with temperatureindication signals (TEMPI to TEMPn), the voltage of output voltage Voutmay be varied according to the temperature of semiconductor device 100.For example, it is well known that as temperature increases, due todecreased mobility, the drive current decreases in conventional IGFETs.Thus, as temperature increases variable resistor R602 may be increasedin response to temperature indication signals (TEMPI to TEMPn). By doingso, output voltage Vout may increase to compensate for the loss ofperformance of transistors as temperature increases. Similarly, astemperature decreases, the value of variable resistor R602 may decrease.In this way, the speed of circuitry in the peripheral circuits 128and/or memory array 124 may be maintained at high temperatures whilepower may still be conserved at lower temperatures.

Also, as noted earlier, temperature indication signals (TEMPI to TEMPn)may include hysteresis. In this way, voltage multiplier 600 may not haveadverse affects of continuously changing the output voltage Vout whenthe operating temperature of semiconductor device 100 hovers around athreshold temperature set in a temperature sensing circuits (300-1 to300-n).

Referring now to FIG. 7, a circuit schematic diagram of a variableresistor according to an embodiment is set forth and given the generalreference character 700. Variable resistor 700 may correspond tovariable resistor R602 of FIG. 6. In this case, node N702 may correspondto output voltage node Vout and node N704 may correspond to feedbacknode Nfb.

Variable resistor 700 may include a resistance selection control section710 and a resistance section 720. A resistance selection control section710 may receive temperature indication signals (TEMPI to TEMPn) and mayprovide temperature range signals (TEMP1-2, TEMP2-3, . . . ,TEMP(n-1)n), where n corresponds to the number of temperature sensingcircuits (300-1 to 300-n). Resistance section 720 may receivetemperature range signals (TEMP1-2, TEMP2-3, . . . , TEMP(n-1)n) andhighest order temperature indication signal TEMPn and select a totalresistance value in accordance thereto.

Resistance selection control section 710 may include inverters (IV7-1,IV7-2, . . . IV7(n-1)) and AND gates (AND7-1, AND7-2, . . . AND7(n-1)),where n corresponds to the number of temperature sensing circuits (300-1to 300-n). Inverter IV7-1 receives temperature indication signal TEMP2as an input and provides an output as an input to AND gate AND7-1. ANDgate AND7-1 receives temperature indication signal TEMPI as anotherinput and provides temperature range signal TEMPI-2 as an output.Inverter IV7-2 receives temperature indication signal TEMP3 as an inputand provides an output as an input to AND gate AND7-2. AND gate AND7-2receives temperature indication signal TEMP2 as another input andprovides temperature range signal TEMP2-3 as an output. Such configuredcircuits may be repeated up to n-1 times with the last one having aninverter IV7-(n-1) that receives temperature indication signal TEMPn asan input and provides an output as an input to AND gate AND7-(n-1). ANDgate AND7-(n-1) receives temperature indication signal TEMP(n-1) asanother input and provides temperature range signal TEMP(n-1)n as anoutput.

Resistance section can include transistors (N700-I to N700-n), resistors(R700-I to R700-n), and resistor R710. Transistor N700-I may have adrain connected to node N702, a source connected to a first terminal ofresistor R700-1, and a gate connected to receive temperature rangesignal Tempt-2. Resistor R700-1 may have a second terminal connected toa first terminal of resistor R710. Transistor N700-2 may have a drainconnected to node N702, a source connected to a first terminal ofresistor R700-2, and a gate connected to receive temperature rangesignal Temp1-3. Resistor R700-2 may have a second terminal connected toa first terminal of resistor R710. Such transistor—resistor seriesconnection between node N702 and the second terminal of resistor 710 maybe continued to form n such circuits, where n is equal to the number oftemperature sensing circuits (300-1 to 300-n). Resistor 710 may have asecond terminal connected to node 704.

The operation of variable resistor 700 will now be explained.

Resistance selection control section 710 operates to provide onetemperature range signal (Temp1-2 to Temp(n-1)n) being active at anygiven temperature. This may be accomplished by only activating atemperature range signal (Temp1-2 to Temp(n-1)n) if a lower temperatureindication signal (Temp1 to Tempn) is active while the next successivetemperature range signal (Temp1 to Tempn) is inactive (low). Forexample, if temperature indication signal Temp1 is high and temperaturerange signal Temp1 is low, this may indicate the temperature is betweena temperature threshold level set by temperature sensing circuit 300-1and a temperature set by temperature sensing circuit 300-2, for example.In this case, both inputs to AND gate AND7-1 are high and temperaturerange signal TEMP1-2 goes high. With temperature range signal TEMP1-2high, transistor N700-1 in resistance section 720 may be turned on andresistor R700-1 may be included in a the overall resistance of variableresistor 700. Thus, the resistance value of variable resistor 700 wouldbe the resistance value of resistor R710 and resistor R700-1.

By successively setting the threshold voltages of temperature sensingcircuits (300-1 to 300-n), temperature control section can determine atemperature range in which semiconductor device 100 is operating and mayselect a resistance value for variable resistor 700 accordingly. Byusing resistor R710 to provide a minimum resistance value, the variableresistor 700 may be finely tuned by selecting one of resistors (R700-1to R700-n) to provide an overall resistance value.

It should be noted that temperature sensing circuits (300-1 to 300-n)may be an independent set of temperature sensing circuits as opposed toother temperature sensing circuits if an independent temperature rangesare needed for selection of values of variable resistor 700. By usingsuch a variable resistor 700 as a variable resistor R602 in a voltagemultiplier circuit 600, internal power supply voltages used for exampleas an array voltage generator 118 or periphery voltage generator 122 maybe varied in accordance with the temperature of the semiconductor device100.

Referring now to FIG. 8(a), a temperature dependent word line drivingcircuit according to an embodiment is set forth in a block schematicdiagram and given the general reference character 800.

Temperature dependent word line driving circuit 800 can include a wordline driver 810, selection circuits 820 and 830, and a negative voltagegenerator 840. Word line driver 810 may receive address signals Addressand may select a word line WL in accordance with the address. Althoughonly one word line WL is illustrated, a word line WL for each row ofmemory cells in a memory array is provided, however, only one word lineWL in an array may be selected in accordance with a unique addressAddress value. A word line low voltage V_(SSWL) may be provided fromselection circuits (820 and 830) to word line driver 810. Selectioncircuit 820 may receive a temperature indication signal Temp3 at aselection enable input and may provide a ground voltage as the word linelow voltage V_(SSWL) when enabled. Selection circuit 830 may receive atemperature indication signal Temp3 at a selection enable input and mayprovide a negative voltage V_(NEG) as the word line low voltage V_(SSWL)when enabled. Negative voltage generator 840 may receive temperatureindication signals (Temp3 to Tempn) as inputs and may provide a negativevoltage V_(NEG) that varies in accordance with the value of temperatureindication signals (Temp3 to Tempn).

The operation of temperature dependent word line driving circuit 800will now be described by referring to FIGS. 8(a) and 8(b). FIG. 8(b) isa graph showing a word line low voltage versus temperature according toan embodiment.

When the temperature of semiconductor device 100 is below apredetermined temperature (T3 set in temperature sensing circuit 300-3),selector circuit 820 provides a ground voltage (Vss) to the word linelow voltage V_(SSWL). However, once the temperature rises above T3, theselector circuit 820 is disabled and selector circuit 830 is enabled topass a negative voltage V_(NEG) provided by negative voltage generator840 to be used as the word line low voltage V_(SSWL). As temperatureincreases, temperature indication signals Temp3 to Tempn may control thenegative voltage generator 840 to provide a more negative voltage, forexample at temperatures T4 and T5, as negative voltage V_(NEG). In thisway, a memory cell (such as memory cell 900 in FIG. 9) connected to aword line WL may have reduced leakage.

It is understood that the word line low voltage may be provided as aword line disable logic level, in which a memory cell 900 may have adata node disconnected from a bit line.

Referring to FIG. 9, a DRAM memory cell is set forth in a circuitschematic diagram and given the general reference character 900. Memorycell 900 includes a pass transistor 910 and a capacitor 920. Passtransistor 910 receives the word line WL at a gate and may have a sourceconnected to a first terminal of a capacitor 920 and a drain connectedto a bit line BL. Capacitor 920 may have a second terminal connected toa plate voltage Vplt.

When the word line is at a word line low voltage V_(SSWL), the passtransistor 910 is turned off. In this state, it is desirable that thecharge leakage through pass transistor 910 be minimized. By providing aword line low voltage V_(SSWL) that varies with temperature (becomesmore negative as temperature increases), temperature dependent word linedriving circuit 800 may reduce charge leakage through pass transistor910 even when the temperature of semiconductor device 100 increases.This may reduce refresh time and improve operating characteristics ofsemiconductor device 100 and may even increase a temperature range atwhich semiconductor device 100 can reliably operate.

As temperature increases, the charge stored on a capacitor (capacitor920 of FIG. 9) degrades more quickly due to increased leakage current.Thus, refresh must be performed more frequently. Typically, refreshfrequency is designed for the worst-case temperature. However in such aconventional case, at low temperatures the memory cells may be refreshedmuch more frequently than necessary and power in standby modes may bewasted.

Referring now to FIG. 10(a), a refresh timing circuit according to anembodiment is set forth in a block schematic diagram and given thegeneral reference character 1000 a. Refresh timing circuit 1000 a mayinclude an oscillator circuit 1010 a and a counter circuit 1020 a.Oscillator circuit 1010 a may receive a refresh enable signalRefresh_enable and may provide an oscillation signal OSCa to countercircuit 1020 a. Counter circuit 1020 a may receive temperatureindication signals (Temp1 to Tempn) and may provide a refresh signalRefresh as an output.

The operation of refresh timing circuit 1000 a will now be described inconjunction with FIGS. 10(a), 10(c), and 10(d). FIG. 10(d) is a timingdiagram illustrating the operation of refresh timing circuits 10(a) and10(b). When refresh enable signal Refresh_enable is in a disable state,oscillator circuit 1010 a is disabled and oscillation signal OSCa isheld low. When semiconductor device 100 enters a self refresh mode,refresh enable signal Refresh enable becomes an enable state (logichigh, for example). When refresh enable signal Refresh_enable becomes anenable state, oscillator circuit 1010 a becomes enabled and provides anoscillation signal OSCa (a periodic square wave) to counter circuit 1020a. Counter circuit 1020 a counts the number of oscillation signals OSCa(i.e., the number of times oscillation signal OSCa transitions from alow level to a high level) and provides a refresh signal Refresh havinga pulsed output when the counter circuit 1020 a reaches a predeterminedcount value. When refresh signal Refresh pulses high, a row of memorycells in memory array 124 are refreshed.

The frequency of the refresh signal is determined by the frequency ofoscillation signal OSCa and the predetermined count value in counter1020 a. It is noted that the frequency of oscillation signal OSCa maydecrease as temperature increases due to the degradation of transistorcurrent characteristics. However, it is desirable that the refreshfrequency increases to compensate for increased charge leakage frommemory cell 900. Temperature indication signals (Temp 1 to Tempn) areprovided to counter circuit 1020 a to change the predetermined countvalue in accordance with the temperature of the semiconductor device100. This is illustrated in FIG. 10(c). FIG. 10(C) is a diagramillustrating how the refresh frequency changes with temperature. Whentemperature indication signals (Temp1 to Tempn) indicate that thetemperature of semiconductor device 100 is at temperature T0, less thantemperature T1, counter circuit 1020 a may have a first predeterminedcount value to provide a refresh frequency freq1. As temperatureincreases, the refresh frequency may slowly decrease due to thefrequency of oscillation signal OSCa decreasing. When temperatureindication signals (Temp1 to Tempn) indicate that the temperature ofsemiconductor device 100 is greater than temperature T1 and less thantemperature T2, counter circuit 1020 a may have a second predeterminedcount value to provide a refresh frequency freq2 greater than frequencyfreq1, wherein the second predetermined count value is less than thefirst predetermined count value. Once again as the temperature increasesabove temperature T1, the refresh frequency may slowly decrease due tothe frequency of oscillation signal OSCa decreasing. When temperatureindication signals (Temp1 to Tempn) indicate that the temperature ofsemiconductor device 100 is greater than temperature T2 and less thantemperature T3, counter circuit 1020 a may have a third predeterminedcount value to provide a refresh frequency freq3 greater than frequencyfreq2, wherein the third predetermined count value is less than thesecond predetermined count value. Once again as the temperatureincreases above temperature T2, the refresh frequency may slowlydecrease due to the frequency of oscillation signal OSCa decreasing.When temperature indication signals (Temp1 to Tempn) indicate that thetemperature of semiconductor device 100 is greater than temperature T3counter circuit 1020 a may have a fourth predetermined count value toprovide a refresh frequency freq4 greater than frequency freq3, whereinthe fourth predetermined count value is less than the thirdpredetermined count value.

In this way, as temperature increases, the frequency of refresh in aself-refresh mode of operation may increase to compensate for degradedcharge leakage from a memory cell 900. Furthermore, by varying thefrequency of refresh in this manner, low temperature current consumptionmay be reduced because frequency of refresh does not need to be set forthe worst case (high temperature).

Referring now to FIG. 10(b), a refresh timing circuit according to anembodiment is set forth in a block schematic diagram and given thegeneral reference character 1000 b. Refresh timing circuit 1000 b mayinclude an oscillator circuit 1010 b and a counter circuit 1020 b.Oscillator circuit 1010 b may receive a refresh enable signal Refreshenable and temperature indication signals (Temp1 to Tempn) and mayprovide an oscillation signal OSCa to counter circuit 1020 b. Countercircuit 1020 b may provide a refresh signal Refresh as an output.

The operation of refresh timing circuit 1000 b will now be described inconjunction with FIGS. 10(b), 10(c), and 10(d). When refresh enablesignal Refresh_enable is in a disable state, oscillator circuit 1010 bis disabled and oscillation signal OSCb is held low. When semiconductordevice 100 enters a self refresh mode refresh enable signalRefresh_enable becomes an enable state (logic high, for example). Whenrefresh enable signal Refresh_enable becomes an enable state, oscillatorcircuit 1010 b becomes enabled and provides an oscillation signal OSCb(a periodic square wave) to counter circuit 1020 b. Counter circuit 1020b counts the number of oscillation signals OSCb (i.e. the number oftimes oscillation signal OSCb transitions from a low level to a highlevel) and provides a refresh signal Refresh having a pulsed output whenthe counter circuit 1020 b reaches a predetermined count value. Whenrefresh signal Refresh pulses high, a row of memory cells in memoryarray 124 are refreshed.

The frequency of the refresh signal is determined by the frequency ofoscillation signal OSCb and the predetermined count value in counter1020 b. It is noted that the frequency of oscillation signal OSCb maydecrease as temperature increases due to the degradation of transistorcurrent characteristics. However, it is desirable that the refreshfrequency increases to compensate for increased charge leakage frommemory cell 900. Temperature indication signals (Temp1 to Tempn) areprovided to oscillation circuit 1010 b to change the base frequency ofoscillation signal OSCb in accordance with the temperature of thesemiconductor device 100. This is illustrated in FIG. 10(c). FIG. 10(c)is a diagram illustrating how the refresh frequency changes withtemperature. When temperature indication signals (Temp1 to Tempn)indicate that the temperature of semiconductor device 100 is attemperature T0, less than temperature T1, oscillation circuit 1010 b mayhave a first predetermined base frequency to provide a refresh frequencyfreq1. As temperature increases, the refresh frequency may slowlydecrease due to the frequency of oscillation signal OSCb decreasing.When temperature indication signals (Temp1 to Tempn) indicate that thetemperature of semiconductor device 100 is greater than temperature T1and less than temperature T2, oscillation circuit 1010 b may have asecond predetermined base frequency to provide a refresh frequency freq2greater than frequency freq1, wherein the second predetermined basefrequency is greater than the first predetermined base frequency. Onceagain as the temperature increases above temperature T1, the refreshfrequency may slowly decrease due to the frequency of oscillation signalOSCb decreasing. When temperature indication signals (Temp1 to Tempn)indicate that the temperature of semiconductor device 100 is greaterthan temperature T1 and less than temperature T2, oscillation circuit1010 b may have a third predetermined base frequency to provide arefresh frequency freq3 greater than frequency freq2, wherein the thirdpredetermined base frequency is greater than the second predeterminedbase frequency. Once again as the temperature increases abovetemperature T2, the refresh frequency may slowly decrease due to thefrequency of oscillation signal OSCa decreasing. When temperatureindication signals (Temp1 to Tempn) indicate that the temperature ofsemiconductor device 100 is greater than temperature T3, oscillationcircuit 1010 b may have a fourth predetermined base frequency to providea refresh frequency freq4 greater than frequency freq3, wherein thefourth predetermined base frequency is greater than the thirdpredetermined base frequency.

In this way, as temperature increases, the frequency of refresh in aself-refresh mode of operation may increase to compensate for degradedcharge leakage from a memory cell 900. Furthermore, by varying thefrequency of refresh in this manner, low temperature current consumptionmay be reduced because frequency of refresh does not need to be set forthe worst case (high temperature).

It is noted that the temperature indication signals (Temp1 to Tempn)provided to refresh timing circuits (1000 a and 1000 b) can havetemperature values that can be set by a user and may include hysteresisthat can be set by a user as previously described. By doing so, refreshfrequency may not intermittently change when semiconductor device 100hovers around a predetermined threshold temperature of a temperaturesensing circuit (300-1 to 300-n).

Referring now to FIG. 11(a), a circuit schematic diagram for atemperature sensing circuit according to an embodiment is set forth andgiven the general reference character 1100. Temperature sensing circuit1100 may be used to replace each of temperature sensing circuits (300-1to 300-n) in FIG. 3 a.

Temperature sensing circuit 1100 may include variable resistors (1110and 1120), transistors (P1100 and P1110), amplifier 1130, and latchcircuit 1140. Transistor P1110 may have a source connected to a powersupply, a drain connected to the source of transistor P1100, and a gateconnected to receive a temperature detect enable signal TEN_. TransistorP1100 may have a drain connected to a first terminal of variableresistor 1120 and a positive input to amplifier 1130 and may have a gateconnected to receive voltage V_(TEMP). Variable resistor 1120 may have asecond terminal connected to a first terminal of variable resistor 1110.Variable resistor 1120 may receive hysteresis select signals HYS1-m(j)which can be used to select the resistance value of variable resistor1120. Variable resistor 1120 may also receive temperature indicationsignal TEMPj. Variable resistor 1110 may have a second terminalconnected to ground. Variable resistor 1110 may receive temperatureselect signals TS1-k(j) which can be used to select the resistance valueof variable resistor 1110. Amplifier 1130 may receive temperatureindependent reference voltage V_(BGREF) at a negative input terminal andtemperature detect enable signal TEN_(—) and may provide an output tolatch circuit 1140. Latch circuit 1140 may receive temperature latchenable signal TLEN and may provide temperature indication signal TEMPjas an output.

Variable resistors 1120 may be essentially the same as variable resistor320-j illustrated in FIG. 4. Variable resistor 1110 may be essentiallythe same as variable resistor 310-j illustrated in FIG. 5.

Temperature sensing circuit 1110 may operate in essentially the samemanner as temperature sensing circuit 300-2 of FIG. 3(a), excepttemperature sensing circuit 1110 is enabled by temperature detect enablesignal TEN_(—) and the temperature indication signal TEMPj is latchedinto latch circuit 1140 in response to temperature latch enable signalTLEN.

FIG. 11(b) is a timing diagram illustrating the timing of temperaturedetect enable signal TEN_(—) and temperature latch enable signal TLENwhen semiconductor circuit 100 performs a temperature detectionoperation. When no temperature detection operation is currently beingperformed, temperature detect enable signal TEN_(—) is high (atemperature detection disable state) and temperature latch enable signalis low (a latch disable state). With temperature detect enable signalTEN_high, transistor P1110 is turned off and amplifier 1130 is turnedoff so that essentially no current is consumed by temperature detectcircuit 1100. With temperature latch enable low, latch circuit maintainsa previously detected temperature indication signal value from aprevious temperature detection operation. When a temperature detectionoperation is performed, temperature detect enable signal TEN_pulses low.With temperature detect enable signal TEN_low, transistor P1110 isturned on and amplifier circuit 1130 is turned on and temperature isdetected in a similar manner as explained with regard to temperaturedetection circuit 320-2 above. After a time delay Δt, temperature latchenable signal TLEN pulses high and the output of amplifier circuit 1130is proved by latch 1140 as temperature indication signal TEMPj. Timedelay Δt is selected to ensure sufficient time for temperature detectioncircuit 1100 to properly detect the temperature without unwantedglitches. Subsequently, temperature detect enable signal TEN_returns toa high level to turn off transistor P1110 and disable amplifier 1130 andtemperature latch enable signal TLEN returns low and latch circuit 1140maintains the temperature indication signal TEMPj until the nexttemperature detection operation is performed.

In this way, temperature detection may be performed at intervalsdetermined by the user and temperature sensing circuits 1100 may onlyconsume power during the detection and overall power consumption ofsemiconductor device 100 may be reduced.

Temperature sensing circuit 1100 maintains essentially the sametemperature response with hysteresis as illustrated in FIG. 3(b). Also,a user may select the temperature threshold and hysteresis amount byproviding hysteresis select signals HYS1-m(j) and temperature selectsignals TS1-k(j) in the same manner as described above.

The above embodiments illustrate a case where multiple parameters may bemodified according by sharing the same temperature sensing circuits(300-1 to 300-n or 1100). Such multiple parameters include an arrayvoltage Vary, a peripheral circuit voltage Vperi, refresh timing signalRefresh, and a low voltage V_(SSWL) for driving a word line WL. However,each of these parameters may need to be independently tuned with respectto temperature. Such an embodiment will now be described.

Referring now to FIG. 12, a temperature dependent parameter settingscheme according to an embodiment is set forth in a block schematicdiagram and given the general reference character 1200. Temperaturedependent parameter setting scheme 1200 may be incorporated into asemiconductor device, such as semiconductor device 100 in FIG. 1. Such asemiconductor device may be a DRAM, as just one example.

Temperature dependent parameter setting scheme 1200 may include arraytemperature sensing circuits 1210, periphery temperature sensingcircuits 1220, refresh temperature sensing circuits 1230, negativevoltage temperature sensing circuits 1240, an array voltage generator1250, a periphery voltage generator 1260, a refresh timing circuit 1270and a negative voltage generator 1280.

Array temperature sensing circuits 1210 may receive temperatureindependent reference voltage V_(BGREF), reference voltage V_(TEMP),array temperature select signals TSARRY1-k, array hysteresis settingsignals HYSARRAY1-m and may provide array temperature indication signalsTemp Varray. Array voltage generator 1250 may receive array temperatureindication signals Temp Varray and may provide an array voltage Vary.

Periphery temperature sensing circuits 1220 may receive temperatureindependent reference voltage V_(BGREF), reference voltage V_(TEMP),periphery temperature select signals TSPERI1-k, periphery hysteresissetting signals HYSPERI1-m and may provide array temperature indicationsignals Temp Vperi. Periphery voltage generator 1260 may receiveperiphery temperature indication signals Temp Vperi and may provide aperiphery voltage Vperi.

Refresh temperature sensing circuits 1230 may receive temperatureindependent reference voltage V_(BGREF), reference voltage V_(TEMP),refresh temperature select signals TSREF1-k, refresh hysteresis settingsignals HYSREF1-m and may provide refresh temperature indication signalsTemp Refresh. Refresh timing circuit 1270 may receive refreshtemperature indication signals Temp Refresh and may provide refreshsignal Refresh.

Negative voltage temperature sensing circuits 1240 may receivetemperature independent reference voltage V_(BGREF), reference voltageV_(TEMP), negative voltage temperature select signals TSNV1-k, negativevoltage hysteresis setting signals HYSNV1-m and may provide negativevoltage temperature indication signals Temp NV. Negative voltagegenerator 1280 may receive negative voltage temperature indicationsignals Temp NV and may provide a word line low voltage V_(SSWL).

Temperature sensing circuits (1210, 1220, 1230, and 1240) may correspondto temperature sensing circuits (300-1 to 300-n and/or 1100). However,each of array temperature sensing circuits 1210, periphery temperaturesensing circuits 1220, refresh temperature sensing circuits 1230, andnegative voltage temperature sensing circuits 1240 may be a separategroup of temperature sensing circuits. In this way, an array voltagegenerator 1250, a periphery voltage generator 1260, a refresh timingcircuit 1270 and a negative voltage generator 1280 may be independentlycontrolled having individually programmed temperature threshold voltagein which parameters, such as voltage levels and timings may be set. Eachgroup of temperature sensing circuits (1210, 1220, 1230, and 1240) mayhave independently set temperature thresholds (by setting a resistancevalue of a resistor such as variable resistor 310-j) in accordance withtemperature setting signals (TSARRAY1-k, TSPERI1-k, T SREF1-k, andTSREF1-k). Likewise, each group of temperature sensing circuits (1210,1220, 1230, and 1240) may have independently set temperature hysteresisvalues (by setting a resistance value of a resistor such as variableresistor 320-j) in accordance with hysteresis setting signals(HYSARRAY1-m, HY SPERI1-m, HYSREF1-m, and HYSREF1-m).

By using temperature dependent parameter setting scheme 1200, asemiconductor device 100 may be more finely tuned and may operate moreoptimally over a wide temperature range.

Although temperature dependent parameter setting scheme shows each groupof temperature sensing circuits (1210, 1220, 1230, and 1240) includes ntemperature sensing circuits controlled by k temperature select signals(TSArray1-k, TSPERI1-k, TSREF1 -k, and TSNV1-k) and m hysteresis selectsignals (HYSArray1-m, HYSPERI1-n, HYSREF1-m, and HYSNV1-m) to eachprovide n temperature indication signals (Temp Varry, Temp Vperi, TempRefresh, and Temp NV), each group of temperature sensing circuits (1210,1220, 1230, and 1240) may include any independent number of temperaturesensing circuits and any independent number of temperature select andhysteresis select signals according to design goals.

Referring now to FIG. 13, a circuit schematic diagram of a selectregister circuit according to an embodiment is set forth and given thegeneral reference character 1300. Select register circuit 1300 may beused for temperature select registers 114 and hysteresis selectregisters 116 of FIG. 1. For each temperature sensing circuit (300-1 to300-n or 1100), there may be k select register circuits 1300 used fortemperature select registers 114 and there may be m select registercircuits 1300 used for hysteresis select registers 116.

Select register circuit 1300 may include inverters (INV1302, INV1304,and INV1306), pass gate PG1302, and transistor N1302. Pass gate PG1302may receive an input 1302 at an input terminal and a load signal Load ata control input and may provide an output to an input of inverterINV1304. Inverter INV1302 may receive load signal Load and may providean output to another control input terminal of pass gate PG1302.Transistor N1302 may have a source connected to ground, a drainconnected to the input of inverter INV1304, and a gate connected toreceive a power up detect signal PUD. Inverter INV1304 may provide anoutput to a terminal 1304. Inverter INV1306 may have an input connectedto terminal 1304 and an output connected to the imputer of inverterINV1304 to form a latch.

The operation of select register circuit 1300 will now be discussed.When a load operation occurs, such as a load operation for any of thesets of select registers used as temperature select registers 114 orhysteresis select registers 116, load signal Load pulses high.

The load signal Load can correspond to either the temperature selectload signal TSL or hysteresis select load signal HysL. When load signalLoad pulses high, the logic value at input node 1302 is passed throughpass gate PG1302 to be latched in cross-coupled inverters (INV1306 andINV1304) and provided as a select signal at output terminal 1304. Theselect signal may be either a temperature select signal TS or ahysteresis select signal HYS, depending on whether select registercircuit 1300 is used as a temperature select register or hysteresisselect register, respectively. It is noted that input 1302 may receive alogic value from one of input buffers 112. When load signal returns to alow logic level, pass gate PG1302 is turned off and the value remainslatched in cross-coupled inverters (INV1304 and INV1306). TransistorN1302 is provided to supply a known default value in select register onpower up of semiconductor device 100. When power up occurs, power updetect signal PUD pulses high, thus turning on transistor N1302 toprovide a low logic level input to inverter INV1304. In this way, selectsignals (TS or HYS) may be powered up to a known state.

In yet another embodiment, instead of providing hysteresis settingsignals HYS1-m or temperature setting signals TS1-k to selecttemperature thresholds and hysteresis temperature values to temperaturesensing circuits (300-1 to 300-n or 1100), a manufacturer may selectresistance values of variable resistors (310-j, 320-j, 1110, and 1120)during manufacture. This may be done for example, with fuses or a metalmask, for example. Such examples are illustrated in FIGS. 14 and 15.

Referring now to FIG. 14, a circuit schematic diagram of variableresistor for each temperature sensing circuit according to an embodimentis set forth and given the general reference character 1400-j. Variableresistor 1400-j may be used as variable resistor 320-j or 1120, forexample. Variable resistor 1400-j may include resistors RH1 to RHmconnected in series. Resistor RH1 may have a first terminal connected tonode N1-j (corresponding to a node N1-1 for temperature sensing circuit300-1, a node N1-2 for temperature sensing circuit 300-2 and so on).Resistor RH1 may have a second terminal connected to a first terminal ofresistor RH2. Resistor RH2 may have a second terminal connected toresistor RH3. This series connection may be repeated until the lastresistor RHm may have a second terminal connected to a voltage dividernode N2-j (corresponding to a voltage dividing node N2-1 for temperaturesensing circuit 300-1, a voltage dividing node N2-2 for temperaturesensing circuit 300-2 and so on).

Variable resistor 1400-j may include programmable links (FHYS1 j to FHYSmj) and transistor P320-j. Each programmable link (FHYS1 j to FHYS mj)has a first terminal connected to a first terminal of a resistor (RH1 toRHm), respectively, and a second terminal connected to a second terminalof a resistor (RH1 to RHm), respectively. Transistor P320-j has a sourceterminal connected to node N1-j, a drain terminal connected to voltagedivider node N2-j and receives temperature indication signal TEMPj at agate.

Programmable links (FHYS1 j to FHYS mj) may be fuses, such aspolysilicon fuses or metal options, for example.

Programmable links (FHYS1 j to FHYS mj) can each form a shunt for arespective resistor. For example, an unblown fuse or a programmed inmetal option may form a shunt, while a blown fuse or a programmed outmetal option may form an open circuit, such that the respective resistorRH1 to RHm is included or omitted in the resistance value of variableresistor 320-j. In this way, a resistance value for variable resistor1400-j may be selected. When temperature indication signal TEMPj is at alogic low level, transistor P320-j is turned on and may provide a shuntfor variable resistor 1400-j. When temperature indication signal TEMPjis at a logic high level, transistor P320-j is turned off and variableresistor 1400-j may include the cumulative values of resistors (RH1 toRHm) not shunted by respective programmable links (FHYS1 j to FHYS mj).

Referring now to FIG. 15, a circuit schematic diagram of variableresistor for each temperature sensing circuit according to an embodimentis set forth and given the general reference character 1500-j. Variableresistor 1500-j may be used as variable resistor 310-j or 1110, forexample. Variable resistor 1500-j may include resistors RT1 to RTkconnected in series. Resistor RT1 may have a first terminal connected tovoltage dividing node N2-j (corresponding to a node N2-1 for temperaturesensing circuit 300-1, a node N2-2 for temperature sensing circuit 300-2and so on). Resistor RT1 may have a second terminal connected to a firstterminal of resistor RT2. Resistor RT2 may have a second terminalconnected to resistor RT3. This series connection may be repeated untilthe last resistor RTn may have a second terminal connected to ground.

Variable resistor 1500-j may include programmable links (FTS1 j toFTSkj). Each programmable link (FTS 1 j to FTSkj) has a first terminalconnected to a first terminal of a resistor (RT1 to RTk), respectively,and a second terminal connected to a second terminal of a resistor (RT1to RTn), respectively.

Programmable links (FTS 1 j to FTSkj) may be fuses, such as polysiliconfuses or metal options, for example.

Programmable links (FTS1 j to FTSkj) can each form a shunt for arespective resistor RT1 to RTk. For example, an unblown fuse or aprogrammed in metal option may form a shunt, while a blown fuse or aprogrammed out metal option may form an open circuit, such that therespective resistor (RT1 to RTk) is included in the resistance value ofvariable resistor 1500-j. In this way, a resistance value for variableresistor 1500-j may be selected. The resistance value for variableresistor 1500-j may include the cumulative values of resistors (RT1 toRTk) not shunted by respective programmable links (FTS 1 j to FTSkj).

By incorporating the variable resistors (1400-j and 1500-j) in theembodiments, a manufacturer may perform temperature characteristic testsof semiconductor device 100 and select the values of variable resistors(1400-j and 1500-j) at a back end to provide accurate temperaturethreshold values and temperature hysteresis values in temperaturesensing circuits even when there are process variations.

Now a method of the testing temperature sensing circuits to find thevalues of the temperature thresholds and the hysteresis temperatureswill be discussed.

As noted, the refresh frequency of semiconductor device 100 may beincreases as temperature increases to compensate for increased chargeleakage from memory cells. The method of testing described below placesthe semiconductor device 100 in a self-refresh mode of operation andmonitors the current consumed by semiconductor device over a temperaturerange to detect temperature threshold values and hysteresis temperaturevalues of the temperature sensing circuits.

Referring now to FIG. 16, a flow diagram of a method of testing thetemperature sensing circuits of a semiconductor device according to anembodiment is set forth and given the general reference character 1600.

In a step 1605, the semiconductor device 100 is placed in a self-refreshmode of operation and then a temperature of the device is set to aninitial low temperature value (step 1610) and the average currentconsumption of the semiconductor device 100 is sampled to provide afirst current value. The initial low temperature value can be theminimum value of the temperature range in which the semiconductor device100 is to be tested. The temperature can then be incrementally increased(step 1620). In a next step 1630, the average current consumption of thesemiconductor device 100 is sampled to provide a second current value.

In a next step 1640, the first current value is compared to the secondcurrent value and a determination is made as to whether there was a“step-up” in current. A “step-up” in current is when the current throughsemiconductor device 100 makes an increase that can be indicative of anincrease in the self-refresh frequency caused in response to atemperature sensing circuit having a temperature indication signalchange states to incrementally increase the refresh frequency. If thereis no “step-up” in current, the test method goes to step S1650. If a“step-up” in current is detected, the test method goes to step 1670.

In step 1650, the temperature value is checked against a hightemperature value. The high temperature value can be the maximum valueof the temperature range in which the semiconductor device 100 is to betested. If the high temperature value has been reached, the test inended at step S1699. If the maximum temperature value has not beenreached, the test method goes to step S1660.

In step S1660, the last sampled current of step 1630 becomes the firstcurrent value and the test method returns to step S1620.

As mentioned in step S1640, if there is a “step-up” in current, the testmethod goes to step S1670. This “step-up” in current indicates that atemperature threshold value was reached. In step S1670, the temperaturevalue is stored and the current value is stored as a third currentvalue. The temperature value can be stored as a temperature at which atemperature sensing circuit has a temperature threshold value set. Thetest method then proceeds to step S1680, where the temperature isincrementally decreased.

In a next step S1690, the average current consumed by semiconductordevice 100 is sampled and provided as a fourth current value. In a nextstep S1692, the third current value is compared to the fourth currentvalue and a determination is made as to whether there was a “step-down”in current. A “step-down” in current is when the current throughsemiconductor device 100 makes a decrease that can only be indicative ofa decrease in the self-refresh frequency caused in response to atemperature sensing circuit having a temperature indication signalchange states to incrementally decrease the refresh frequency. If thereis no “step-down” in current, the test method goes to step S1694. If a“step-down” in current is detected, the test method goes to step S1696.

In step S1694, the last average current sampled (i.e. the fourth currentvalue) at step S1690 is set as the third current value and the testmethod returns to step S1680.

When a “step-down” in current is detected, step S1696 determines thehysteresis value by subtracting the current temperature value from thelast temperature value stored at step S1670. This temperature value canbe stored as a value at which a temperature sensing circuit has ahysteresis temperature value set.

Next at step S1698, the temperature is reset to the last temperaturevalue stored in step S1670 and the test method returns to step S1660.

Although the test method is performed by incrementing the temperaturefrom a first temperature (a low end temperature) to a second temperature(a high end temperature), the test method may be implemented by startingat a second temperature (a high end temperature) and repeatedlydecrementing the temperature to a first temperature (a low endtemperature) to detect the temperature threshold values and temperaturehysteresis values.

The test method 1600 of FIG. 16 may be performed when the semiconductordevice 100 is integrally contained on a silicon wafer with a pluralityof like semiconductor devices. This may be performed by placing thesilicon wafer on a temperature chuck to accurately provide thetemperature to the semiconductor device.

Alternatively, the test method 1600 of FIG. 16 may be performed afterthe semiconductor device 100 is packaged. In this case, an ambienttemperature may be provided in a chamber setting.

Referring now to FIG. 17, a timing diagram illustrating a method ofwriting values to temperature select registers and hysteresis selectregisters according to an embodiment is set forth and given the generalreference character 1700.

It is noted that semiconductor device 100 may operate synchronously witha system clock Clock and may be a synchronous DRAM.

At a first time t1, a register write command 1710 may be provided tosemiconductor device 100. The register write command 1710 may notifysemiconductor device 100 that registers, such as temperature selectregisters 114 or hysteresis select registers 116 are to have valueswritten. The register write command 1710 may be in packet form, in thatin a first clock cycle, first predetermined values may be received atcontrol, address, and or data pins, at a second clock cycle a secondpredetermined values may be received at control, address, and or datapins, and so on. Then, at a time t2, a register address 1720 may beprovided to semiconductor device 100. A register address 1720 mayidentify a set of temperature select registers 114 or hysteresis selectregisters 116 to have values written. The register address 1720 may alsobe provided in packet form (i.e. serially and synchronously with clockClock). Then, at time t3, register values 1730 may be provided tosemiconductor device 100. Likewise, register values 1730 may be providedin packet form. Register values 1730 may be written in a set oftemperature select registers 114 or hysteresis select registers 116identified by register address 1720.

Although the embodiments illustrate using a bandgap reference generatorcircuit to provide reference voltages (V_(BGREF) and V_(TEMP)) totemperature sensing circuits 120 and to various voltage generators (118and 122) for on chip supplies. The temperature sensing circuits 120 mayreceive reference voltages generated independently from referencevoltages provided to the voltage generators (118 and 122).

Although the embodiments illustrate a semiconductor device 100 that is aDRAM. Other semiconductor devices may benefit from the invention. Forexample, semiconductor device 100 may be a static random access memory(SRAM) and word line driver 138 or 810 may drive a word line forselecting an SRAM cell. An SRAM cell may include n-type IGFETs formingpass transistors to data stored in a cross-coupled inverter type memorycell.

Semiconductor device 100 may also be a non-volatile memory, such as aFLASH memory device using floating gate memory cells, for example. Inthis case, a variable resistor (such as variable resistors 320-j, 310-j,1400, and/or 1500) may have resistance values selected by a programmednon-volatile memory cells, for example.

Semiconductor device 100 may have temperature values periodically readby a controller, or the like. These temperature values may be used tocontrol a cooling device, such as a fan, or the like. In this case, in asystem including a plurality of semiconductor devices, eachsemiconductor device may have a respective cooling device that may becontrollable in accordance with the actual temperature of the respectivesemiconductor device. By doing so, a cooling device, which may have ahigh current draw when turned on, may be optimally used such thatoverall current consumption may be reduced. Furthermore, the coolingdevice, such as a fan, may have different speeds, such that when asemiconductor device has a lower temperature, the cooling device mayhave a slower speed. When the semiconductor device has a highertemperature, the cooling device may have a higher speed. In this way,the cooling device may only draw a larger current when it is criticallynecessary to rapidly cool the semiconductor device. By doing so, overallcurrent consumption may be reduced.

While various particular embodiments set forth herein have beendescribed in detail, the present invention could be subject to variouschanges, substitutions, and alterations without departing from thespirit and scope of the invention. Accordingly, the present invention isintended to be limited only as defined by the appended claims.

What is claimed is:
 1. An apparatus comprising: a temperature-sensingcircuit; a first register coupled to and separate from thetemperature-sensing circuit and configured to: receive a temperatureselect value from a register load operation; and provide the temperatureselect value to the temperature-sensing circuit; and a second registercoupled to the temperature-sensing circuit and configured to provide ahysteresis select value to the temperature-sensing circuit.
 2. Theapparatus of claim 1, wherein the first register and the second registerare both register circuits.
 3. The apparatus of claim 1, wherein thefirst and second registers are configured to receive a plurality oftemperature select values from a plurality of register load operations.4. The apparatus of claim 1, wherein the temperature-sensing circuit isconfigured to provide a temperature indication signal.
 5. The apparatusof claim 1, wherein the hysteresis select value is a difference betweena current temperature value and a previous temperature value.
 6. Theapparatus of claim 1, further comprising an array voltage generatorconfigured to receive the temperature select value from thetemperature-sensing circuit.
 7. The apparatus of claim 1, wherein thefirst register and the second register have a default setting upon powerup.
 8. The apparatus of claim 1, wherein the temperature-sensing circuitcomprises a variable resistor, and wherein the temperature-sensingcircuit is configured to modify a resistance value of the variableresistor based on the temperature select value.
 9. A method comprising:receiving, from a first register, a temperature select value from aregister load operation; providing, from the first register, thetemperature select value to a temperature-sensing circuit separate fromthe first register, wherein the temperature-sensing circuit includes atemperature threshold value; and providing, from a second register, ahysteresis select value to the temperature-sensing circuit, wherein thetemperature-sensing circuit further includes a temperature hysteresisvalue.
 10. The method of claim 9, wherein the first and second registersare both register circuits.
 11. The method of claim 9, furthercomprising receiving, at the first and second registers, a plurality oftemperature select values from a plurality of register load operations.12. The method of claim 9, further comprising providing, from thetemperature-sensing circuit, a temperature indication signal.
 13. Themethod of claim 9, further comprising calculating the hysteresis selectvalue from a difference between a current temperature value and aprevious temperature value.
 14. The method of claim 9, wherein the firstregister and the second register have a default setting upon power up.15. The method of claim 9, wherein the temperature-sensing circuitincludes a variable resistor, and wherein the method further comprisesmodifying, by the temperature-sensing circuit, a resistance value of thevariable resistor based on the temperature select value.
 16. A methodcomprising: receiving, at a plurality of register circuits, a pluralityof bits corresponding to a plurality of temperature select values from aplurality of register load operations; providing, from the plurality ofregister circuits, the plurality of bits to a temperature-sensingcircuit that is separate from the plurality of register circuits,wherein the temperature-sensing circuit includes a temperature thresholdvalue; and providing, from one of the plurality of register circuits, ahysteresis select value to the temperature-sensing circuit, wherein thetemperature-sensing circuit further includes a temperature hysteresisvalue.
 17. The method of claim 16, further comprising providing, fromthe temperature-sensing circuit, a temperature indication signal. 18.The method of claim 16, further comprising calculating the hysteresisselect value from a difference between a current temperature value and aprevious temperature value.
 19. The method of claim 16, wherein thefirst register and the second register have a default setting upon powerup.
 20. The method of claim 16, wherein the temperature-sensing circuitincludes a variable resistor, and wherein the method further comprisesmodifying, by the temperature-sensing circuit, a resistance value of thevariable resistor based on the temperature select value.